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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2412TE85LF. It has typical 11 weeks of manufacturer standard lead time. Resistor - Base - 22 kohms. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 200mhz 200mw surface mount s-mini. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. The transition frequency of the product is 200mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 1. s-mini is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 200mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn2412te85lfct. The toshiba semiconductor and storage's product offers user-desired applications.
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