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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1107ACT(TPL3). Resistor - Base - 10 kohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 80ma 100mw surface mount cst3. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The product is available in surface mount configuration. The 150mv @ 250µa, 5ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. cst3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47 kohms. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 80ma. In addition, 500na is the maximum current at collector cutoff. Alternative Names include rn1107act(tpl3)ct. The toshiba semiconductor and storage's product offers user-desired applications.
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