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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1103MFV,L3F. It has typical 16 weeks of manufacturer standard lead time. Resistor - Base - 22 kohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 150mw surface mount vesm. Furthermore, 70 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The product is available in surface mount configuration. The 300mv @ 500µa, 5ma is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 1. vesm is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 22 kohms. The maximum power of the product is 150mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. Alternative Names include rn1103mfvl3fct. The toshiba semiconductor and storage's product offers user-desired applications.
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