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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC5200N(S1,E,S). It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 15a. It features bipolar (bjt) transistor npn 230v 15a 30mhz 150w through hole to-3p(n). Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 30mhz. The product is available in through hole configuration. The 3v @ 800ma, 8a is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 25. to-3p(n) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 230v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 150w. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 5µa (icbo) is the maximum current at collector cutoff. Alternative Names include 2sc5200n(s1es). The toshiba semiconductor and storage's product offers user-desired applications.
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