2SA1943N-S1-E-S- Toshiba Semiconductor and Storage 2SA1943N(S1,E,S)

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1943N(S1,E,S). It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 15a. It features bipolar (bjt) transistor pnp 230v 15a 30mhz 150w through hole to-3p(n). Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 30mhz. The product is available in through hole configuration. The 3v @ 800ma, 8a is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 25. to-3p(n) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 230v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 150w. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 5µa (icbo) is the maximum current at collector cutoff. Alternative Names include 2sa1943n(s1es). The toshiba semiconductor and storage's product offers user-desired applications.

For more information please check the datasheets.

Toshiba Semiconductor and Storage 2SA1943N(S1,E,S)

Manufacturer:

Toshiba Semiconductor and Storage

Manufacturer Part No:

2SA1943N(S1,E,S)

Enrgtech Part No:

ET11071592

Warranty:

Manufacturer

£ 1.86

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Manufacturer Standard Lead Time:

12 Weeks

Current - Collector (Ic) (Max):

15A

Detailed Description:

Bipolar (BJT) Transistor PNP 230V 15A 30MHz 150W Through Hole TO-3P(N)

DC Current Gain (hFE) (Min) @ Ic, Vce:

80 @ 1A, 5V

Transistor Type:

PNP

Frequency - Transition:

30MHz

Mounting Type:

Through Hole

Vce Saturation (Max) @ Ib, Ic:

3V @ 800mA, 8A

Part Status:

Active

Standard Package:

Supplier Device Package:

TO-3P(N)

Voltage - Collector Emitter Breakdown (Max):

230V

Toshiba Semiconductor and Storage 2SA1943N(S1,E,S)

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