2SC2712-GR-LF Toshiba Semiconductor and Storage 2SC2712-GR,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC2712-GR,LF. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 150ma. It features bipolar (bjt) transistor npn 50v 150ma 80mhz 150mw surface mount s-mini. Furthermore, the product is active The product has 125°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. Furthermore, 70 @ 2ma, 6v is the minimum DC current gain at given voltage. Base Part Number: 2sc2712. The transition frequency of the product is 80mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a npn type. The 250mv @ 10ma, 100ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 150mw. Alternative Names include 2sc2712-grlfct 2sc2712s-grlfct 2sc2712s-grlfct-nd.

RoHs Compliant

Toshiba Semiconductor and Storage 2SC2712-GR,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
2SC2712-GR,LF
Enrgtech Part No:
ET11128342
Warranty:
Manufacturer
£ 0.18
Checking for live stock
Manufacturer Standard Lead Time:
12 Weeks
Current - Collector (Ic) (Max):
150mA
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 150mW Surface Mount S-Mini
Part Status:
Active
Operating Temperature:
125°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 2mA, 6V
Base Part Number:
2SC2712
Frequency - Transition:
80MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Supplier Device Package:
S-Mini
Packaging:
Cut Tape (CT)
Power - Max:
150mW
Other Names:
2SC2712-GRLFCT 2SC2712S-GRLFCT 2SC2712S-GRLFCT-ND


Alternative products


Product Reviews