Manufacturer Standard Lead Time:
12 Weeks
Current - Collector (Ic) (Max):
150mA
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 150mW Surface Mount S-Mini
Part Status:
Active
Operating Temperature:
125°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Base Part Number:
2SA1162
Frequency - Transition:
80MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Supplier Device Package:
S-Mini
Packaging:
Cut Tape (CT)
Power - Max:
150mW
Other Names:
2SA1162-GR(TE85LF))CT
2SA1162-GR(TE85LF))CT-ND
2SA1162-GR(TE85LF)CT
2SA1162-GR(TE85LF)CT-ND
2SA1162-GRCT
2SA1162-GRCT-ND
2SA1162-GRLFCT
2SA1162S-GRLFCT
2SA1162S-GRLFCT-ND