2SA1162-GR-LF Toshiba Semiconductor and Storage 2SA1162-GR,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1162-GR,LF. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 150ma. It features bipolar (bjt) transistor pnp 50v 150ma 80mhz 150mw surface mount s-mini. Furthermore, the product is active The product has 125°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. Base Part Number: 2sa1162. The transition frequency of the product is 80mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a pnp type. The 300mv @ 10ma, 100ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 150mw. Alternative Names include 2sa1162-gr(te85lf))ct 2sa1162-gr(te85lf))ct-nd 2sa1162-gr(te85lf)ct 2sa1162-gr(te85lf)ct-nd 2sa1162-grct 2sa1162-grct-nd 2sa1162-grlfct 2sa1162s-grlfct 2sa1162s-grlfct-nd.

RoHs Compliant

Toshiba Semiconductor and Storage 2SA1162-GR,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
2SA1162-GR,LF
Enrgtech Part No:
ET11313943
Warranty:
Manufacturer
£ 0.15
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Manufacturer Standard Lead Time:
12 Weeks
Current - Collector (Ic) (Max):
150mA
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 150mW Surface Mount S-Mini
Part Status:
Active
Operating Temperature:
125°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Base Part Number:
2SA1162
Frequency - Transition:
80MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Supplier Device Package:
S-Mini
Packaging:
Cut Tape (CT)
Power - Max:
150mW
Other Names:
2SA1162-GR(TE85LF))CT 2SA1162-GR(TE85LF))CT-ND 2SA1162-GR(TE85LF)CT 2SA1162-GR(TE85LF)CT-ND 2SA1162-GRCT 2SA1162-GRCT-ND 2SA1162-GRLFCT 2SA1162S-GRLFCT 2SA1162S-GRLFCT-ND
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1396 (UK2011-EN PDF)(Catalog Page)


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