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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1962-O(Q). Base Part Number: 2sa1962. It features bipolar (bjt) transistor pnp 230v 15a 30mhz 130w through hole to-3p(n). Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 30mhz. The product is available in through hole configuration. The 3v @ 800ma, 8a is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 50. to-3p(n) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 230v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 130w. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 15a. In addition, 5µa (icbo) is the maximum current at collector cutoff. Alternative Names include 2sa1962-oq 2sa1962oq. The toshiba semiconductor and storage's product offers user-desired applications.
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