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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1955FVBTPL3Z. The maximum collector current includes 400ma. It features bipolar (bjt) transistor pnp 12v 400ma 130mhz 100mw surface mount vesm. Furthermore, 300 @ 10ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 130mhz. The product is available in surface mount configuration. The 250mv @ 10ma, 200ma is the maximum Vce saturation. Furthermore, the product is obsolete It is available in the standard package of 1. vesm is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 12v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include 2sa1955fvbtpl3zct. The toshiba semiconductor and storage's product offers user-desired applications.
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