2N2222A, Bipolar Transistor

Base Part Number:

2N2222

Detailed Description:

Bipolar (BJT) Transistor NPN 40V 800mA 500mW Through Hole TO-18

Transistor Type:

NPN

Mounting Type:

Through Hole

Vce Saturation (Max) @ Ib, Ic:

1V @ 50mA, 500mA

Supplier Device Package:

TO-18

Voltage - Collector Emitter Breakdown (Max):

40V

Packaging:

Bulk

Power - Max:

500mW

Package / Case:

TO-206AA, TO-18-3 Metal Can

Current - Collector (Ic) (Max):

800mA

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 150mA, 10V

Manufacturer:

ON Semiconductor