SSM6N15AFU-LF Toshiba Semiconductor and Storage SSM6N15AFU,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N15AFU,LF. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 3.6 ohm @ 10ma, 4v. It features mosfet array 2 n-channel (dual) 30v 100ma 300mw surface mount us6. The product's input capacitance at maximum includes 13.5pf @ 3v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 100µa. Furthermore, the product is active It is available in the standard package of 1. Moreover, the product comes in [Package/ Case]. us6 is the supplier device package value. It has typical 18 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 300mw. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 100ma. Alternative Names include ssm6n15afulfct. The toshiba semiconductor and storage's product offers user-desired applications.

RoHs Compliant

Toshiba Semiconductor and Storage SSM6N15AFU,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM6N15AFU,LF
Enrgtech Part No:
ET11327176
Warranty:
Manufacturer
£ 0.36
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FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
3.6 Ohm @ 10mA, 4V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 100mA 300mW Surface Mount US6
Input Capacitance (Ciss) (Max) @ Vds:
13.5pF @ 3V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 100µA
Part Status:
Active
Standard Package:
1
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
US6
Manufacturer Standard Lead Time:
18 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
300mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
100mA
Other Names:
SSM6N15AFULFCT
Manufacturer:
Toshiba Semiconductor and Storage


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