SSM6L36FE-LM Toshiba Semiconductor and Storage SSM6L36FE,LM
SSM6L36FE-LM Toshiba Semiconductor and Storage SSM6L36FE,LM
SSM6L36FE-LM Toshiba Semiconductor and Storage SSM6L36FE,LM

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6L36FE,LM. The FET features of the product include logic level gate. It has typical 16 weeks of manufacturer standard lead time. It features mosfet array n and p-channel 20v 500ma, 330ma 150mw surface mount es6 (1.6x1.6). The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The continuous current drain at 25°C is 500ma, 330ma. Base Part Number: ssm6l36. The maximum gate charge and given voltages include 1.23nc @ 4v. It has a maximum Rds On and voltage of 630 mohm @ 200ma, 5v. It carries FET type n and p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 46pf @ 10v. The product is available in surface mount configuration. es6 (1.6x1.6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 150mw. Alternative Names include ssm6l36fe(te85lf)ct ssm6l36fe(te85lf)ct-nd ssm6l36felmct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM6L36FE,LM

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM6L36FE,LM
Enrgtech Part No:
ET11406822
Warranty:
Manufacturer
£ 0.46
Checking for live stock
FET Feature:
Logic Level Gate
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
Mosfet Array N and P-Channel 20V 500mA, 330mA 150mW Surface Mount ES6 (1.6x1.6)
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
Current - Continuous Drain (Id) @ 25°C:
500mA, 330mA
Base Part Number:
SSM6L36
Gate Charge (Qg) (Max) @ Vgs:
1.23nC @ 4V
Rds On (Max) @ Id, Vgs:
630 mOhm @ 200mA, 5V
FET Type:
N and P-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
46pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
ES6 (1.6x1.6)
Packaging:
Cut Tape (CT)
Power - Max:
150mW
Other Names:
SSM6L36FE(TE85LF)CT SSM6L36FE(TE85LF)CT-ND SSM6L36FELMCT
pdf icon
Mosfets Prod Guide(Datasheets)


Alternative products


Product Reviews