This is 2101ENGRT manufactured by EPC. The manufacturer part number is EPC2101ENGRT. The FET features of the product include ganfet (gallium nitride). It has a maximum Rds On and voltage of 11.5 mohm @ 20a, 5v. It features mosfet array 2 n-channel (half bridge) 60v 9.5a, 38a surface mount die. The product's input capacitance at maximum includes 300pf @ 30v. The maximum gate charge and given voltages include 2.7nc @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 2ma. Furthermore, the product is active The product egan®, is a highly preferred choice for users. It is available in the standard package of 1. die is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The product has a 60v drain to source voltage. The continuous current drain at 25°C is 9.5a, 38a. Alternative Names include 917-epc2101engrct. The epc's product offers user-desired applications.

For more information please check the datasheets.

EPC 2101ENGRT

Manufacturer:

EPC

Manufacturer Part No:

EPC2101ENGRT

Enrgtech Part No:

ET11568357

Warranty:

Manufacturer

£ 7.17

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FET Feature:

GaNFET (Gallium Nitride)

Rds On (Max) @ Id, Vgs:

11.5 mOhm @ 20A, 5V

Detailed Description:

Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die

Input Capacitance (Ciss) (Max) @ Vds:

300pF @ 30V

Gate Charge (Qg) (Max) @ Vgs:

2.7nC @ 5V

Mounting Type:

Surface Mount

Vgs(th) (Max) @ Id:

2.5V @ 2mA

Part Status:

Active

Series:

eGaN®

Standard Package:

Supplier Device Package:

Die

Packaging:

Cut Tape (CT)

EPC2101 Preliminary Datasheet(Datasheets)

GaN Integration for Higher DC-DC Efficiency and Power Density(Mfg Application Notes)

EPC 2101ENGRT

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