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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N56FE,LM. The FET features of the product include logic level gate, 1.5v drive. It has typical 16 weeks of manufacturer standard lead time. It features mosfet array 2 n-channel (dual) 20v 800ma 150mw surface mount es6. The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The continuous current drain at 25°C is 800ma. The maximum gate charge and given voltages include 1nc @ 4.5v. It has a maximum Rds On and voltage of 235 mohm @ 800ma, 4.5v. It carries FET type 2 n-channel (dual). It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 55pf @ 10v. The product is available in surface mount configuration. es6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 150mw. Alternative Names include ssm6n56felmct.
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