SSM6P35FE-TE85L-F- Toshiba Semiconductor and Storage SSM6P35FE(TE85L,F)
SSM6P35FE-TE85L-F- Toshiba Semiconductor and Storage SSM6P35FE(TE85L,F)
SSM6P35FE-TE85L-F- Toshiba Semiconductor and Storage SSM6P35FE(TE85L,F)

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6P35FE(TE85L,F). The FET features of the product include logic level gate. Base Part Number: ssm6p35. It features mosfet array 2 p-channel (dual) 20v 100ma 150mw surface mount es6 (1.6x1.6). The product's input capacitance at maximum includes 12.2pf @ 3v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 8 ohm @ 50ma, 4v. es6 (1.6x1.6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 150mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 100ma. Alternative Names include ssm6p35fe(te85lf)ct. The toshiba semiconductor and storage's product offers user-desired applications.

RoHs Compliant

Toshiba Semiconductor and Storage SSM6P35FE(TE85L,F)

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM6P35FE(TE85L,F)
Enrgtech Part No:
ET11870293
Warranty:
Manufacturer
£ 0.45
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FET Feature:
Logic Level Gate
Base Part Number:
SSM6P35
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 100mA 150mW Surface Mount ES6 (1.6x1.6)
Input Capacitance (Ciss) (Max) @ Vds:
12.2pF @ 3V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Discontinued at Digi-Key
Standard Package:
1
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
8 Ohm @ 50mA, 4V
Supplier Device Package:
ES6 (1.6x1.6)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
150mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
100mA
Other Names:
SSM6P35FE(TE85LF)CT
Manufacturer:
Toshiba Semiconductor and Storage
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Mosfets Prod Guide(Datasheets)


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