SSM6P41FE-TE85L-F- Toshiba Semiconductor and Storage SSM6P41FE(TE85L,F)
SSM6P41FE-TE85L-F- Toshiba Semiconductor and Storage SSM6P41FE(TE85L,F)
SSM6P41FE-TE85L-F- Toshiba Semiconductor and Storage SSM6P41FE(TE85L,F)

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6P41FE(TE85L,F). The FET features of the product include logic level gate. It has typical 12 weeks of manufacturer standard lead time. It features mosfet array 2 p-channel (dual) 20v 720ma 150mw surface mount es6 (1.6x1.6). The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The continuous current drain at 25°C is 720ma. Base Part Number: ssm6p41. The maximum gate charge and given voltages include 1.76nc @ 4.5v. It has a maximum Rds On and voltage of 300 mohm @ 400ma, 4.5v. It carries FET type 2 p-channel (dual). It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 110pf @ 10v. The product is available in surface mount configuration. es6 (1.6x1.6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 150mw. Alternative Names include ssm6p41fe(te85lf)ct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM6P41FE(TE85L,F)

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM6P41FE(TE85L,F)
Enrgtech Part No:
ET11904163
Warranty:
Manufacturer
£ 0.40
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FET Feature:
Logic Level Gate
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 720mA 150mW Surface Mount ES6 (1.6x1.6)
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
Current - Continuous Drain (Id) @ 25°C:
720mA
Base Part Number:
SSM6P41
Gate Charge (Qg) (Max) @ Vgs:
1.76nC @ 4.5V
Rds On (Max) @ Id, Vgs:
300 mOhm @ 400mA, 4.5V
FET Type:
2 P-Channel (Dual)
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
110pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
ES6 (1.6x1.6)
Packaging:
Cut Tape (CT)
Power - Max:
150mW
Other Names:
SSM6P41FE(TE85LF)CT
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