Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N58NU,LF. The FET features of the product include logic level gate, 1.8v drive. It has typical 12 weeks of manufacturer standard lead time. It features mosfet array 2 n-channel (dual) 30v 4a 1w surface mount 6-udfn (2x2). The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The continuous current drain at 25°C is 4a. The maximum gate charge and given voltages include 1.8nc @ 4.5v. It has a maximum Rds On and voltage of 84 mohm @ 2a, 4.5v. It carries FET type 2 n-channel (dual). It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 129pf @ 15v. The product is available in surface mount configuration. 6-udfn (2x2) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 1w. Alternative Names include ssm6n58nulfct.
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