Deliver to
United Kingdom
This is manufactured by Vishay Siliconix. The manufacturer part number is SI3900DV-T1-E3. The FET features of the product include logic level gate. It has typical 22 weeks of manufacturer standard lead time. It features mosfet array 2 n-channel (dual) 20v 2a 830mw surface mount 6-tsop. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The continuous current drain at 25°C is 2a. Base Part Number: si3900. The maximum gate charge and given voltages include 4nc @ 4.5v. It has a maximum Rds On and voltage of 125 mohm @ 2.4a, 4.5v. It carries FET type 2 n-channel (dual). It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 830mw. Alternative Names include si3900dv-t1-e3ct.
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