TK65S04N1L-LQ Toshiba Semiconductor and Storage TK65S04N1L,LQ
TK65S04N1L-LQ Toshiba Semiconductor and Storage TK65S04N1L,LQ

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK65S04N1L,LQ. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 40v 65a (ta) 107w (tc) surface mount dpak+. The typical Vgs (th) (max) of the product is 2.5v @ 300µa. Furthermore, the product is active The product has 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 39nc @ 10v. It has a maximum Rds On and voltage of 4.3 mohm @ 32.5a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2550pf @ 10v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. dpak+ is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 65a (ta). The product carries maximum power dissipation 107w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk65s04n1llqct.

RoHs Compliant

Toshiba Semiconductor and Storage TK65S04N1L,LQ

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK65S04N1L,LQ
Enrgtech Part No:
ET10840425
Warranty:
Manufacturer
£ 1.69
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Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 40V 65A (Ta) 107W (Tc) Surface Mount DPAK+
Vgs(th) (Max) @ Id:
2.5V @ 300µA
Part Status:
Active
Operating Temperature:
175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
39nC @ 10V
Rds On (Max) @ Id, Vgs:
4.3 mOhm @ 32.5A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2550pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
DPAK+
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
65A (Ta)
Power Dissipation (Max):
107W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK65S04N1LLQCT


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