TPW1R306PL-L1Q Toshiba Semiconductor and Storage TPW1R306PL,L1Q

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPW1R306PL,L1Q. It has typical 12 weeks of manufacturer standard lead time. Its typical moisture sensitivity level is 1 (unlimited). It features n-channel 60v 260a (tc) 960mw (ta), 170w (tc) surface mount 8-dsop advance. The product is available in surface mount configuration. Furthermore, the product is active The product u-mosix-h, is a highly preferred choice for users. The maximum Vgs rate is ±20v. It is available in the standard package of 1. 8-dsop advance is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 960mw (ta), 170w (tc). The product has a 60v drain to source voltage. The continuous current drain at 25°C is 260a (tc). This product use mosfet (metal oxide) technology. Alternative Names include tpw1r306pll1qct. The toshiba semiconductor and storage's product offers user-desired applications.

RoHs Compliant

Toshiba Semiconductor and Storage TPW1R306PL,L1Q

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TPW1R306PL,L1Q
Enrgtech Part No:
ET10874979
Warranty:
Manufacturer
£ 2.61
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Manufacturer Standard Lead Time:
12 Weeks
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Detailed Description:
N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
Mounting Type:
Surface Mount
Part Status:
Active
Series:
U-MOSIX-H
Vgs (Max):
±20V
Standard Package:
1
Supplier Device Package:
8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
FET Type:
N-Channel
Package / Case:
8-PowerVDFN
Power Dissipation (Max):
960mW (Ta), 170W (Tc)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
260A (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TPW1R306PLL1QCT
Manufacturer:
Toshiba Semiconductor and Storage


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