TK5P60W-RVQ Toshiba Semiconductor and Storage TK5P60W,RVQ
TK5P60W-RVQ Toshiba Semiconductor and Storage TK5P60W,RVQ

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK5P60W,RVQ. The FET features of the product include super junction. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 600v 5.4a (ta) 60w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 3.7v @ 270µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 10.5nc @ 10v. It has a maximum Rds On and voltage of 900 mohm @ 2.7a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 380pf @ 300v. The product is available in surface mount configuration. The product dtmosiv, is a highly preferred choice for users. dpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.4a (ta). The product carries maximum power dissipation 60w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk5p60wrvqct.

RoHs Compliant

Toshiba Semiconductor and Storage TK5P60W,RVQ

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK5P60W,RVQ
Enrgtech Part No:
ET10934495
Warranty:
Manufacturer
£ 1.57
Checking for live stock
FET Feature:
Super Junction
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 600V 5.4A (Ta) 60W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
3.7V @ 270µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
10.5nC @ 10V
Rds On (Max) @ Id, Vgs:
900 mOhm @ 2.7A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
380pF @ 300V
Mounting Type:
Surface Mount
Series:
DTMOSIV
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.4A (Ta)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK5P60WRVQCT


Alternative products


Product Reviews