TPH4R003NL-L1Q Toshiba Semiconductor and Storage TPH4R003NL,L1Q
TPH4R003NL-L1Q Toshiba Semiconductor and Storage TPH4R003NL,L1Q

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPH4R003NL,L1Q. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 30v 40a (tc) 1.6w (ta), 36w (tc) surface mount 8-sop advance (5x5). The typical Vgs (th) (max) of the product is 2.3v @ 200µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 14.8nc @ 10v. It has a maximum Rds On and voltage of 4 mohm @ 20a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1400pf @ 15v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-sop advance (5x5) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 40a (tc). The product carries maximum power dissipation 1.6w (ta), 36w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tph4r003nll1qct.

RoHs Compliant

Toshiba Semiconductor and Storage TPH4R003NL,L1Q

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TPH4R003NL,L1Q
Enrgtech Part No:
ET10935679
Warranty:
Manufacturer
£ 0.92
Checking for live stock
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 30V 40A (Tc) 1.6W (Ta), 36W (Tc) Surface Mount 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id:
2.3V @ 200µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
14.8nC @ 10V
Rds On (Max) @ Id, Vgs:
4 mOhm @ 20A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 15V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Power Dissipation (Max):
1.6W (Ta), 36W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TPH4R003NLL1QCT


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