This is manufactured by IXYS. The manufacturer part number is IXTQ180N10T. It features n-channel 100v 180a (tc) 480w (tc) through hole to-3p. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. Furthermore, the product is active The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 151nc @ 10v. It has a maximum Rds On and voltage of 6.4 mohm @ 25a, 10v. It carries FET type n-channel. It is available in the standard package of 30. The ixys's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 6900pf @ 25v. The product is available in through hole configuration. The product trenchmv™, is a highly preferred choice for users. to-3p is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 180a (tc). The product carries maximum power dissipation 480w (tc). This product use mosfet (metal oxide) technology.

For more information please check the datasheets.

IXYS IXTQ180N10T

Manufacturer:

IXYS

Manufacturer Part No:

IXTQ180N10T

Enrgtech Part No:

ET10956890

Warranty:

Manufacturer

£ 3.93

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Detailed Description:

N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO-3P

Vgs(th) (Max) @ Id:

4.5V @ 250µA

Part Status:

Active

Operating Temperature:

-55°C ~ 175°C (TJ)

Package / Case:

TO-3P-3, SC-65-3

Gate Charge (Qg) (Max) @ Vgs:

151nC @ 10V

Rds On (Max) @ Id, Vgs:

6.4 mOhm @ 25A, 10V

FET Type:

N-Channel

Standard Package:

Manufacturer:

IXYS

Drain to Source Voltage (Vdss):

100V

Vgs (Max):

±30V

IXT(H,Q)180N10T(Datasheets)

IXYS IXTQ180N10T

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