TPW1R005PL-L1Q Toshiba Semiconductor and Storage TPW1R005PL,L1Q

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPW1R005PL,L1Q. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 45v 300a (tc) 960mw (ta), 170w (tc) surface mount 8-dsop advance. The typical Vgs (th) (max) of the product is 2.4v @ 1ma. Furthermore, the product is active The product has 175°c operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 122nc @ 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 45v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 9600pf @ 22.5v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. 8-dsop advance is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 300a (tc). The product carries maximum power dissipation 960mw (ta), 170w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tpw1r005pll1qct.

RoHs Compliant

Toshiba Semiconductor and Storage TPW1R005PL,L1Q

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TPW1R005PL,L1Q
Enrgtech Part No:
ET11000253
Warranty:
Manufacturer
£ 2.51
Checking for live stock
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 45V 300A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
Vgs(th) (Max) @ Id:
2.4V @ 1mA
Part Status:
Active
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
122nC @ 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
45V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
9600pF @ 22.5V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
300A (Tc)
Power Dissipation (Max):
960mW (Ta), 170W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TPW1R005PLL1QCT


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