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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K59CTB,L3F. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 40v 2a (ta) 1w (ta) surface mount cst3b. The typical Vgs (th) (max) of the product is 1.2v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 1.1nc @ 4.2v. It has a maximum Rds On and voltage of 215 mohm @ 1a, 8v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 130pf @ 10v. The product is available in surface mount configuration. The product u-mosvii-h, is a highly preferred choice for users. cst3b is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3k59ctbl3fct.
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