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SSM3K116TU-LF Toshiba Semiconductor and Storage SSM3K116TU,LF
SSM3K116TU-LF Toshiba Semiconductor and Storage SSM3K116TU,LF
SSM3K116TU-LF Toshiba Semiconductor and Storage SSM3K116TU,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K116TU,LF. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 30v 2.2a (ta) 500mw (ta) surface mount ufm. The typical Vgs (th) (max) of the product is 1.1v @ 100µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 100 mohm @ 500ma, 4.5v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 245pf @ 10v. The product is available in surface mount configuration. The product u-mosiii, is a highly preferred choice for users. ufm is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.2a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3k116tulfct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM3K116TU,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM3K116TU,LF
Enrgtech Part No:
ET11007255
Warranty:
Manufacturer
£ 0.40
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Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount UFM
Vgs(th) (Max) @ Id:
1.1V @ 100µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
100 mOhm @ 500mA, 4.5V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
245pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSIII
Supplier Device Package:
UFM
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM3K116TULFCT
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Mosfets Prod Guide(Datasheets)
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