TK13A65U-STA4-Q-M- Toshiba Semiconductor and Storage TK13A65U(STA4,Q,M)
TK13A65U-STA4-Q-M- Toshiba Semiconductor and Storage TK13A65U(STA4,Q,M)
TK13A65U-STA4-Q-M- Toshiba Semiconductor and Storage TK13A65U(STA4,Q,M)
TK13A65U-STA4-Q-M- Toshiba Semiconductor and Storage TK13A65U(STA4,Q,M)

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK13A65U(STA4,Q,M). It features n-channel 650v 13a (ta) 40w (tc) through hole to-220sis. The typical Vgs (th) (max) of the product is 5v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 17nc @ 10v. It has a maximum Rds On and voltage of 380 mohm @ 6.5a, 10v. It carries FET type n-channel. It is available in the standard package of 500. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 950pf @ 10v. The product is available in through hole configuration. The product dtmosii, is a highly preferred choice for users. to-220sis is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 13a (ta). The product carries maximum power dissipation 40w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk13a65u(sta4qm) tk13a65usta4qm.

RoHs Compliant

Toshiba Semiconductor and Storage TK13A65U(STA4,Q,M)

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK13A65U(STA4,Q,M)
Enrgtech Part No:
ET11025209
Warranty:
Manufacturer
£ 2.99
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Detailed Description:
N-Channel 650V 13A (Ta) 40W (Tc) Through Hole TO-220SIS
Vgs(th) (Max) @ Id:
5V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Rds On (Max) @ Id, Vgs:
380 mOhm @ 6.5A, 10V
FET Type:
N-Channel
Standard Package:
500
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
950pF @ 10V
Mounting Type:
Through Hole
Series:
DTMOSII
Supplier Device Package:
TO-220SIS
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
13A (Ta)
Power Dissipation (Max):
40W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK13A65U(STA4QM) TK13A65USTA4QM
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Mosfets Prod Guide(Datasheets)


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