Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM5G10TU(TE85L,F). The FET features of the product include schottky diode (isolated). It features p-channel 20v 1.5a (ta) 500mw (ta) surface mount ufv. The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is obsolete The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 6.4nc @ 4v. It has a maximum Rds On and voltage of 213 mohm @ 1a, 4v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 250pf @ 10v. The product is available in surface mount configuration. The product u-mosiii, is a highly preferred choice for users. ufv is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.5a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm5g10tu(te85lf)ct.
Basket Total:
£ 0
We don't have this product in stock at the moment. Our maximum lead time can extend to two weeks.
We will keep you informed about the delivery status and shipment date once you have placed your order.
