IRF640STRRPBF Vishay Siliconix

This is manufactured by Vishay Siliconix. The manufacturer part number is IRF640STRRPBF. It has typical 18 weeks of manufacturer standard lead time. It features n-channel 200v 18a (tc) 3.1w (ta), 130w (tc) surface mount to-263 (d²pak). The typical Vgs (th) (max) of the product is 4v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 70nc @ 10v. It has a maximum Rds On and voltage of 180 mohm @ 11a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1300pf @ 25v. The product is available in surface mount configuration. to-263 (d²pak) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 18a (tc). The product carries maximum power dissipation 3.1w (ta), 130w (tc). This product use mosfet (metal oxide) technology. Alternative Names include irf640strrpbfct.

RoHs Compliant

Vishay Siliconix IRF640STRRPBF

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
IRF640STRRPBF
Enrgtech Part No:
ET11055070
Warranty:
Manufacturer
£ 2.61
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Manufacturer Standard Lead Time:
18 Weeks
Detailed Description:
N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount TO-263 (D²Pak)
Vgs(th) (Max) @ Id:
4V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
70nC @ 10V
Rds On (Max) @ Id, Vgs:
180 mOhm @ 11A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1300pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Power Dissipation (Max):
3.1W (Ta), 130W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
IRF640STRRPBFCT
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Additional Assembly Site 21/Oct/2016(PCN Assembly/Origin)
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IRF640S(L)/SIHF640S(L)(Datasheets)


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