2SK4017-Q- Toshiba Semiconductor and Storage 2SK4017(Q)
2SK4017-Q- Toshiba Semiconductor and Storage 2SK4017(Q)
2SK4017-Q- Toshiba Semiconductor and Storage 2SK4017(Q)

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SK4017(Q). It features n-channel 60v 5a (ta) 20w (tc) through hole pw-mold2. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 15nc @ 10v. It has a maximum Rds On and voltage of 100 mohm @ 2.5a, 10v. It carries FET type n-channel. It is available in the standard package of 200. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 730pf @ 10v. The product is available in through hole configuration. The product u-mosiii, is a highly preferred choice for users. pw-mold2 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 5a (ta). The product carries maximum power dissipation 20w (tc). This product use mosfet (metal oxide) technology. Alternative Names include 2sk4017(q)-nd 2sk4017q.

RoHs Compliant

Toshiba Semiconductor and Storage 2SK4017(Q)

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
2SK4017(Q)
Enrgtech Part No:
ET11079625
Warranty:
Manufacturer
£ 0.59
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Detailed Description:
N-Channel 60V 5A (Ta) 20W (Tc) Through Hole PW-MOLD2
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-251-3 Stub Leads, IPak
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Rds On (Max) @ Id, Vgs:
100 mOhm @ 2.5A, 10V
FET Type:
N-Channel
Standard Package:
200
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
730pF @ 10V
Mounting Type:
Through Hole
Series:
U-MOSIII
Supplier Device Package:
PW-MOLD2
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Power Dissipation (Max):
20W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
2SK4017(Q)-ND 2SK4017Q
pdf icon
Mosfets Prod Guide(Datasheets)
pdf icon
1394 (UK2011-EN PDF)(Catalog Page)


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