SSM6J512NU-LF Toshiba Semiconductor and Storage SSM6J512NU,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6J512NU,LF. It has typical 12 weeks of manufacturer standard lead time. It features p-channel 12v 10a (ta) 1.25w (ta) surface mount 6-udfnb (2x2). The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 19.5nc @ 4.5v. It has a maximum Rds On and voltage of 16.2 mohm @ 4a, 8v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1400pf @ 6v. The product is available in surface mount configuration. The product u-mosvii, is a highly preferred choice for users. 6-udfnb (2x2) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 10a (ta). The product carries maximum power dissipation 1.25w (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm6j512nulfct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM6J512NU,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM6J512NU,LF
Enrgtech Part No:
ET11122314
Warranty:
Manufacturer
£ 0.48
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Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
P-Channel 12V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
19.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
16.2 mOhm @ 4A, 8V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 6V
Mounting Type:
Surface Mount
Series:
U-MOSVII
Supplier Device Package:
6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 8V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Power Dissipation (Max):
1.25W (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM6J512NULFCT


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