SIHF12N60E-GE3 Vishay Siliconix

This is manufactured by Vishay Siliconix. The manufacturer part number is SIHF12N60E-GE3. It features n-channel 600v 12a (tc) 33w (tc) through hole to-220 full pack. The typical Vgs (th) (max) of the product is 4v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 58nc @ 10v. It has a maximum Rds On and voltage of 380 mohm @ 6a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 937pf @ 100v. The product is available in through hole configuration. The product e, is a highly preferred choice for users. to-220 full pack is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 12a (tc). The product carries maximum power dissipation 33w (tc). This product use mosfet (metal oxide) technology. Alternative Names include sihf12n60e-ge3ct.

RoHs Compliant

Vishay Siliconix SIHF12N60E-GE3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SIHF12N60E-GE3
Enrgtech Part No:
ET11233768
Warranty:
Manufacturer
£ 2.63
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Detailed Description:
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Vgs(th) (Max) @ Id:
4V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
58nC @ 10V
Rds On (Max) @ Id, Vgs:
380 mOhm @ 6A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
937pF @ 100V
Mounting Type:
Through Hole
Series:
E
Supplier Device Package:
TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
33W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SIHF12N60E-GE3CT
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SIL-079-2014-Rev-0 26/Sep/2014(PCN Assembly/Origin)
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Mult Devices 18/Jul/2017(PCN Assembly/Origin)
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SiHF12N60E(Datasheets)


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