SSM3J353F-LF Toshiba Semiconductor and Storage SSM3J353F,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J353F,LF. It has typical 12 weeks of manufacturer standard lead time. It features p-channel 30v 2a (ta) 600mw (ta) surface mount s-mini. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. Furthermore, the product is active The product has 150°c operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 3.4nc @ 4.5v. It has a maximum Rds On and voltage of 150 mohm @ 2a, 10v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is +20v, -25v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 159pf @ 15v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. s-mini is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2a (ta). The product carries maximum power dissipation 600mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3j353flfct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM3J353F,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM3J353F,LF
Enrgtech Part No:
ET11261209
Warranty:
Manufacturer
£ 0.51
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Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
P-Channel 30V 2A (Ta) 600mW (Ta) Surface Mount S-Mini
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Part Status:
Active
Operating Temperature:
150°C
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
3.4nC @ 4.5V
Rds On (Max) @ Id, Vgs:
150 mOhm @ 2A, 10V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
+20V, -25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
159pF @ 15V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
S-Mini
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Power Dissipation (Max):
600mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM3J353FLFCT


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