SSM3K72CTC-L3F Toshiba Semiconductor and Storage SSM3K72CTC,L3F

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K72CTC,L3F. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 60v 150ma (ta) 500mw (ta) surface mount cst3c. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 0.35nc @ 4.5v. It has a maximum Rds On and voltage of 3.9 ohm @ 100ma, 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 17pf @ 10v. The product is available in surface mount configuration. The product u-mosvii-h, is a highly preferred choice for users. cst3c is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 150ma (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3k72ctcl3fct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM3K72CTC,L3F

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM3K72CTC,L3F
Enrgtech Part No:
ET11329966
Warranty:
Manufacturer
£ 0.29
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Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 60V 150mA (Ta) 500mW (Ta) Surface Mount CST3C
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-1123
Gate Charge (Qg) (Max) @ Vgs:
0.35nC @ 4.5V
Rds On (Max) @ Id, Vgs:
3.9 Ohm @ 100mA, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
17pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVII-H
Supplier Device Package:
CST3C
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
150mA (Ta)
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM3K72CTCL3FCT


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