SSM3J15FU-LF Toshiba Semiconductor and Storage SSM3J15FU,LF
SSM3J15FU-LF Toshiba Semiconductor and Storage SSM3J15FU,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J15FU,LF. It has typical 16 weeks of manufacturer standard lead time. It features p-channel 30v 100ma (ta) 150mw (ta) surface mount usm. The typical Vgs (th) (max) of the product is 1.7v @ 100µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 12 ohm @ 10ma, 4v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 9.1pf @ 3v. The product is available in surface mount configuration. The product π-mosvi, is a highly preferred choice for users. usm is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 100ma (ta). The product carries maximum power dissipation 150mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3j15fulfct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM3J15FU,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM3J15FU,LF
Enrgtech Part No:
ET11373721
Warranty:
Manufacturer
£ 0.23
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Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount USM
Vgs(th) (Max) @ Id:
1.7V @ 100µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Rds On (Max) @ Id, Vgs:
12 Ohm @ 10mA, 4V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
9.1pF @ 3V
Mounting Type:
Surface Mount
Series:
π-MOSVI
Supplier Device Package:
USM
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Power Dissipation (Max):
150mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM3J15FULFCT


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