TK7S10N1Z-LQ Toshiba Semiconductor and Storage TK7S10N1Z,LQ

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK7S10N1Z,LQ. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 100v 7a (ta) 50w (tc) surface mount dpak+. The typical Vgs (th) (max) of the product is 4v @ 100µa. Furthermore, the product is active The product has 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 7.1nc @ 10v. It has a maximum Rds On and voltage of 48 mohm @ 3.5a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 470pf @ 10v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. dpak+ is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7a (ta). The product carries maximum power dissipation 50w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk7s10n1zlqct.

RoHs Compliant

Toshiba Semiconductor and Storage TK7S10N1Z,LQ

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK7S10N1Z,LQ
Enrgtech Part No:
ET11394956
Warranty:
Manufacturer
£ 1.28
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Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 100V 7A (Ta) 50W (Tc) Surface Mount DPAK+
Vgs(th) (Max) @ Id:
4V @ 100µA
Part Status:
Active
Operating Temperature:
175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
7.1nC @ 10V
Rds On (Max) @ Id, Vgs:
48 mOhm @ 3.5A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
470pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
DPAK+
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Power Dissipation (Max):
50W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK7S10N1ZLQCT


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