CDM22010-650-SL Central Semiconductor Corp CDM22010-650 SL

This is manufactured by Central Semiconductor Corp. The manufacturer part number is CDM22010-650 SL. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 650v 10a (ta) 2w (ta), 156w (tc) through hole to-220. The typical Vgs (th) (max) of the product is 4v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 1 ohm @ 5a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The central semiconductor corp's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is 30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1168pf @ 25v. The product is available in through hole configuration. to-220 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 10a (ta). The product carries maximum power dissipation 2w (ta), 156w (tc). This product use mosfet (metal oxide) technology. Alternative Names include cdm22010-650 sl-nd cdm22010-650sl.

RoHs Compliant

Central Semiconductor Corp CDM22010-650 SL

Manufacturer:
Central Semiconductor Corp
Manufacturer Part No:
CDM22010-650 SL
Enrgtech Part No:
ET11396694
Warranty:
Manufacturer
£ 1.90
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Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 650V 10A (Ta) 2W (Ta), 156W (Tc) Through Hole TO-220
Vgs(th) (Max) @ Id:
4V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Rds On (Max) @ Id, Vgs:
1 Ohm @ 5A, 10V
FET Type:
N-Channel
Standard Package:
50
Manufacturer:
Central Semiconductor Corp
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1168pF @ 25V
Mounting Type:
Through Hole
Supplier Device Package:
TO-220
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Power Dissipation (Max):
2W (Ta), 156W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
CDM22010-650 SL-ND CDM22010-650SL
pdf icon
CDM22010-650(Datasheets)


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