GA10JT12-263 GeneSiC Semiconductor

This is manufactured by GeneSiC Semiconductor. The manufacturer part number is GA10JT12-263. It has typical 18 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 120 mohm @ 10a. It features 1200v 25a (tc) 170w (tc) surface mount. The product's input capacitance at maximum includes 1403pf @ 800v. The product is available in surface mount configuration. Furthermore, the product is active The product has a 1200v drain to source voltage. In addition, tube is the available packaging type of the product. The product has 175°c (tj) operating temperature range. The continuous current drain at 25°C is 25a (tc). Its typical moisture sensitivity level is 1 (unlimited). It is available in the standard package of 50. The product carries maximum power dissipation 170w (tc). This product use sic (silicon carbide junction transistor) technology. Alternative Names include 1242-1186 ga10jt12-220iso ga10jt12220iso. The genesic semiconductor's product offers user-desired applications.

RoHs Compliant

GeneSiC Semiconductor GA10JT12-263

Manufacturer:
GeneSiC Semiconductor
Manufacturer Part No:
GA10JT12-263
Enrgtech Part No:
ET11441349
Warranty:
Manufacturer
£ 18.23
Checking for live stock
Manufacturer Standard Lead Time:
18 Weeks
Rds On (Max) @ Id, Vgs:
120 mOhm @ 10A
Detailed Description:
1200V 25A (Tc) 170W (Tc) Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
1403pF @ 800V
Mounting Type:
Surface Mount
Part Status:
Active
Drain to Source Voltage (Vdss):
1200V
Packaging:
Tube
Operating Temperature:
175°C (TJ)
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Standard Package:
50
Power Dissipation (Max):
170W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Other Names:
1242-1186 GA10JT12-220ISO GA10JT12220ISO
Manufacturer:
GeneSiC Semiconductor
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GA10JT12-263(Datasheets)


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