SSM6J511NU-LF Toshiba Semiconductor and Storage SSM6J511NU,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6J511NU,LF. It features p-channel 12v 14a (ta) 1.25w (ta) surface mount 6-udfnb (2x2). The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 47nc @ 4.5v. It has a maximum Rds On and voltage of 9.1 mohm @ 4a, 8v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3350pf @ 6v. The product is available in surface mount configuration. The product u-mosvii, is a highly preferred choice for users. 6-udfnb (2x2) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 14a (ta). The product carries maximum power dissipation 1.25w (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm6j511nulfct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM6J511NU,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM6J511NU,LF
Enrgtech Part No:
ET11448640
Warranty:
Manufacturer
£ 0.50
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Detailed Description:
P-Channel 12V 14A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
47nC @ 4.5V
Rds On (Max) @ Id, Vgs:
9.1 mOhm @ 4A, 8V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3350pF @ 6V
Mounting Type:
Surface Mount
Series:
U-MOSVII
Supplier Device Package:
6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 8V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
14A (Ta)
Power Dissipation (Max):
1.25W (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM6J511NULFCT


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