TPCC8103-TE12L-QM- Toshiba Semiconductor and Storage TPCC8103(TE12L,QM)
TPCC8103-TE12L-QM- Toshiba Semiconductor and Storage TPCC8103(TE12L,QM)
TPCC8103-TE12L-QM- Toshiba Semiconductor and Storage TPCC8103(TE12L,QM)

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPCC8103(TE12L,QM). It features p-channel 30v 18a (ta) 700mw (ta), 27w (tc) surface mount 8-tson advance (3.3x3.3). The typical Vgs (th) (max) of the product is 2v @ 1ma. Furthermore, the product is discontinued at digi-key The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 38nc @ 10v. It has a maximum Rds On and voltage of 12 mohm @ 9a, 10v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1600pf @ 10v. The product is available in surface mount configuration. The product u-mosv, is a highly preferred choice for users. 8-tson advance (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 18a (ta). The product carries maximum power dissipation 700mw (ta), 27w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tpcc8103(te12lqm)ct.

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Toshiba Semiconductor and Storage TPCC8103(TE12L,QM)

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TPCC8103(TE12L,QM)
Enrgtech Part No:
ET11467824
Warranty:
Manufacturer
£ 1.11
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Detailed Description:
P-Channel 30V 18A (Ta) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id:
2V @ 1mA
Part Status:
Discontinued at Digi-Key
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Rds On (Max) @ Id, Vgs:
12 mOhm @ 9A, 10V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1600pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSV
Supplier Device Package:
8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
18A (Ta)
Power Dissipation (Max):
700mW (Ta), 27W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TPCC8103(TE12LQM)CT
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Mosfets Prod Guide(Datasheets)


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