IXFH50N20 IXYS
IXFH50N20 IXYS

This is manufactured by IXYS. The manufacturer part number is IXFH50N20. It features n-channel 200v 50a (tc) 300w (tc) through hole to-247ad (ixfh). The typical Vgs (th) (max) of the product is 4v @ 4ma. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 220nc @ 10v. It has a maximum Rds On and voltage of 45 mohm @ 25a, 10v. It carries FET type n-channel. It is available in the standard package of 30. The ixys's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4400pf @ 25v. The product is available in through hole configuration. The product hiperfet™, is a highly preferred choice for users. to-247ad (ixfh) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 50a (tc). The product carries maximum power dissipation 300w (tc). This product use mosfet (metal oxide) technology.

RoHs Compliant

IXYS IXFH50N20

Manufacturer:
IXYS
Manufacturer Part No:
IXFH50N20
Enrgtech Part No:
ET11479957
Warranty:
Manufacturer
£ 8.82
Checking for live stock
Detailed Description:
N-Channel 200V 50A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Vgs(th) (Max) @ Id:
4V @ 4mA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
220nC @ 10V
Rds On (Max) @ Id, Vgs:
45 mOhm @ 25A, 10V
FET Type:
N-Channel
Standard Package:
30
Manufacturer:
IXYS
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4400pF @ 25V
Mounting Type:
Through Hole
Series:
HiPerFET™
Supplier Device Package:
TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
pdf icon
IXF(H,M,T)(42,50,58)N20(Datasheets)


Alternative products


Product Reviews