SSM6K211FE-LF Toshiba Semiconductor and Storage SSM6K211FE,LF
SSM6K211FE-LF Toshiba Semiconductor and Storage SSM6K211FE,LF
SSM6K211FE-LF Toshiba Semiconductor and Storage SSM6K211FE,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6K211FE,LF. It has typical 10 weeks of manufacturer standard lead time. It features n-channel 20v 3.2a (ta) 500mw (ta) surface mount es6 (1.6x1.6). The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 10.8nc @ 4.5v. It has a maximum Rds On and voltage of 47 mohm @ 2a, 4.5v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 510pf @ 10v. The product is available in surface mount configuration. The product u-mosiii, is a highly preferred choice for users. es6 (1.6x1.6) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.2a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm6k211fe(te85lfct ssm6k211fe(te85lfct-nd ssm6k211felfct.

RoHs Compliant

Toshiba Semiconductor and Storage SSM6K211FE,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM6K211FE,LF
Enrgtech Part No:
ET11537109
Warranty:
Manufacturer
£ 0.40
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Manufacturer Standard Lead Time:
10 Weeks
Detailed Description:
N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6 (1.6x1.6)
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
Gate Charge (Qg) (Max) @ Vgs:
10.8nC @ 4.5V
Rds On (Max) @ Id, Vgs:
47 mOhm @ 2A, 4.5V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
510pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSIII
Supplier Device Package:
ES6 (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM6K211FE(TE85LFCT SSM6K211FE(TE85LFCT-ND SSM6K211FELFCT
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Mosfets Prod Guide(Datasheets)


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