TK13A60D-STA4-Q-M- Toshiba Semiconductor and Storage TK13A60D(STA4,Q,M)
TK13A60D-STA4-Q-M- Toshiba Semiconductor and Storage TK13A60D(STA4,Q,M)
TK13A60D-STA4-Q-M- Toshiba Semiconductor and Storage TK13A60D(STA4,Q,M)
TK13A60D-STA4-Q-M- Toshiba Semiconductor and Storage TK13A60D(STA4,Q,M)

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK13A60D(STA4,Q,M). It has typical 24 weeks of manufacturer standard lead time. It features n-channel 600v 13a (ta) 50w (tc) through hole to-220sis. The typical Vgs (th) (max) of the product is 4v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 40nc @ 10v. It has a maximum Rds On and voltage of 430 mohm @ 6.5a, 10v. It carries FET type n-channel. It is available in the standard package of 2,500. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2300pf @ 25v. The product is available in through hole configuration. The product π-mosvii, is a highly preferred choice for users. to-220sis is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 13a (ta). The product carries maximum power dissipation 50w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk13a60dsta4qm.

RoHs Compliant

Toshiba Semiconductor and Storage TK13A60D(STA4,Q,M)

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK13A60D(STA4,Q,M)
Enrgtech Part No:
ET11549995
Warranty:
Manufacturer
£ 2.68
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Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 600V 13A (Ta) 50W (Tc) Through Hole TO-220SIS
Vgs(th) (Max) @ Id:
4V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Rds On (Max) @ Id, Vgs:
430 mOhm @ 6.5A, 10V
FET Type:
N-Channel
Standard Package:
2,500
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2300pF @ 25V
Mounting Type:
Through Hole
Series:
π-MOSVII
Supplier Device Package:
TO-220SIS
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
13A (Ta)
Power Dissipation (Max):
50W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK13A60DSTA4QM
pdf icon
Mosfets Prod Guide(Datasheets)
pdf icon
1393 (UK2011-EN PDF)(Catalog Page)


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