Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK7E80W,S1X. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 800v 6.5a (ta) 110w (tc) through hole to-220. The typical Vgs (th) (max) of the product is 4v @ 280µa. Furthermore, the product is active The product has 150°c operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 13nc @ 10v. It has a maximum Rds On and voltage of 950 mohm @ 3.3a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 800v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 700pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-220 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 6.5a (ta). The product carries maximum power dissipation 110w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk7e80w,s1x(s tk7e80ws1x.
Basket Total:
£ 0
We don't have this product in stock at the moment. Our maximum lead time can extend to two weeks.
We will keep you informed about the delivery status and shipment date once you have placed your order.
