TK20N60W5-S1VF Toshiba Semiconductor and Storage TK20N60W5,S1VF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK20N60W5,S1VF. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 600v 20a (ta) 165w (tc) through hole to-247. The typical Vgs (th) (max) of the product is 4.5v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 55nc @ 10v. It has a maximum Rds On and voltage of 175 mohm @ 10a, 10v. It carries FET type n-channel. It is available in the standard package of 30. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1800pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-247 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 20a (ta). The product carries maximum power dissipation 165w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk20n60w5,s1vf(s tk20n60w5s1vf.

RoHs Compliant

Toshiba Semiconductor and Storage TK20N60W5,S1VF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK20N60W5,S1VF
Enrgtech Part No:
ET11577017
Warranty:
Manufacturer
£ 3.25
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Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 600V 20A (Ta) 165W (Tc) Through Hole TO-247
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
55nC @ 10V
Rds On (Max) @ Id, Vgs:
175 mOhm @ 10A, 10V
FET Type:
N-Channel
Standard Package:
30
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1800pF @ 300V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
TO-247
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Power Dissipation (Max):
165W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK20N60W5,S1VF(S TK20N60W5S1VF


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