This is manufactured by Vishay Siliconix. The manufacturer part number is SI7370DP-T1-GE3. It features n-channel 60v 9.6a (ta) 1.9w (ta) surface mount. The typical Vgs (th) (max) of the product is 4v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 57nc @ 10v. It has a maximum Rds On and voltage of 11 mohm @ 12a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9.6a (ta). The product carries maximum power dissipation 1.9w (ta). This product use mosfet (metal oxide) technology. Alternative Names include si7370dp-t1-ge3ct.

For more information please check the datasheets.

Vishay Siliconix SI7370DP-T1-GE3

Manufacturer:

Vishay Siliconix

Manufacturer Part No:

SI7370DP-T1-GE3

Enrgtech Part No:

ET11592788

Warranty:

Manufacturer

£ 2.59

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Detailed Description:

N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount

Vgs(th) (Max) @ Id:

4V @ 250µA

Part Status:

Active

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

PowerPAK® SO-8

Gate Charge (Qg) (Max) @ Vgs:

57nC @ 10V

Rds On (Max) @ Id, Vgs:

11 mOhm @ 12A, 10V

FET Type:

N-Channel

Standard Package:

Manufacturer:

Vishay Siliconix

Drain to Source Voltage (Vdss):

60V

Vgs (Max):

±20V

SI7370DP(Datasheets)

Vishay Siliconix SI7370DP-T1-GE3

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