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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK42A12N1,S4X. It features n-channel 120v 42a (tc) 35w (tc) through hole to-220sis. The typical Vgs (th) (max) of the product is 4v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 52nc @ 10v. It has a maximum Rds On and voltage of 9.4 mohm @ 21a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 120v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3100pf @ 60v. The product is available in through hole configuration. The product u-mosviii-h, is a highly preferred choice for users. to-220sis is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 42a (tc). The product carries maximum power dissipation 35w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk42a12n1,s4x(s tk42a12n1,s4x-nd tk42a12n1s4x.
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