TK20C60W-S1VQ Toshiba Semiconductor and Storage TK20C60W,S1VQ

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK20C60W,S1VQ. It features n-channel 600v 20a (ta) 165w (tc) through hole i2pak. The typical Vgs (th) (max) of the product is 3.7v @ 1ma. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 48nc @ 10v. It has a maximum Rds On and voltage of 155 mohm @ 10a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1680pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. i2pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 20a (ta). The product carries maximum power dissipation 165w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk20c60w,s1vq(s tk20c60ws1vq.

RoHs Compliant

Toshiba Semiconductor and Storage TK20C60W,S1VQ

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK20C60W,S1VQ
Enrgtech Part No:
ET11661561
Warranty:
Manufacturer
£ 4.77
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Detailed Description:
N-Channel 600V 20A (Ta) 165W (Tc) Through Hole I2PAK
Vgs(th) (Max) @ Id:
3.7V @ 1mA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
48nC @ 10V
Rds On (Max) @ Id, Vgs:
155 mOhm @ 10A, 10V
FET Type:
N-Channel
Standard Package:
50
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1680pF @ 300V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
I2PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Power Dissipation (Max):
165W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK20C60W,S1VQ(S TK20C60WS1VQ


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