2SJ168TE85LF Toshiba Semiconductor and Storage

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SJ168TE85LF. It has a maximum Rds On and voltage of 2 ohm @ 50ma, 10v. It features p-channel 60v 200ma (ta) 200mw (ta) surface mount sc-59. The product's input capacitance at maximum includes 85pf @ 10v. The product is available in surface mount configuration. Furthermore, the product is discontinued at digi-key The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. It is available in the standard package of 1. sc-59 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 200mw (ta). The continuous current drain at 25°C is 200ma (ta). This product use mosfet (metal oxide) technology. Alternative Names include 2sj168te85lfct. The toshiba semiconductor and storage's product offers user-desired applications.

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Toshiba Semiconductor and Storage 2SJ168TE85LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
2SJ168TE85LF
Enrgtech Part No:
ET11679289
Warranty:
Manufacturer
£ 0.85
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Rds On (Max) @ Id, Vgs:
2 Ohm @ 50mA, 10V
Detailed Description:
P-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount SC-59
Input Capacitance (Ciss) (Max) @ Vds:
85pF @ 10V
Mounting Type:
Surface Mount
Part Status:
Discontinued at Digi-Key
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Standard Package:
1
Supplier Device Package:
SC-59
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
200mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
2SJ168TE85LFCT
Manufacturer:
Toshiba Semiconductor and Storage


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