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TK16J60W-S1VQ Toshiba Semiconductor and Storage TK16J60W,S1VQ

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK16J60W,S1VQ. The FET features of the product include super junction. It features n-channel 600v 15.8a (ta) 130w (tc) through hole to-3p(n). The typical Vgs (th) (max) of the product is 3.7v @ 790µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 38nc @ 10v. It has a maximum Rds On and voltage of 190 mohm @ 7.9a, 10v. It carries FET type n-channel. It is available in the standard package of 25. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1350pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-3p(n) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 15.8a (ta). The product carries maximum power dissipation 130w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk16j60w,s1vq(o tk16j60ws1vq.

RoHs Compliant

Toshiba Semiconductor and Storage TK16J60W,S1VQ

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
TK16J60W,S1VQ
Enrgtech Part No:
ET11680808
Warranty:
Manufacturer
£ 4.30
Checking for live stock
FET Feature:
Super Junction
Detailed Description:
N-Channel 600V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N)
Vgs(th) (Max) @ Id:
3.7V @ 790µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Rds On (Max) @ Id, Vgs:
190 mOhm @ 7.9A, 10V
FET Type:
N-Channel
Standard Package:
25
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1350pF @ 300V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
15.8A (Ta)
Power Dissipation (Max):
130W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK16J60W,S1VQ(O TK16J60WS1VQ
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